Semiconductor Discrete Devices
Fast Recovery Diode is a semiconductor diode specifically designed for rapid switching operations.
Features
* Lower reverse leakage current
* Low power consumption, high efficiency
* High reliability
* RoHS compliant product
Applications
* Motor drives
* Switch-mode power supplies
* Industrial control systems
Package and outline
TO-220F-2L
Maximum Ratings (Tc=25℃)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking Voltage
VRRMVRWMVR
600
V
Average Rectified Forward Current
IF(AV)
15
A
Surge non repetitive forward current (tp = 8.3 ms sinusoidal)
IFSM
150
A
Storage Temperature Range
Tstg
-55~+150
℃
Operating Junction Temperature
TJ
150
℃
Electrical Characteristics
Parameter
Symbol
Value(typ)
Value(max)
Unit
Instantaneous Forward Voltage (Note 1)@ IF = 15A, TC = 25°C@…