QINWEI High Performance 600V Fast Recovery Diode MUR3060PT

Semiconductor Discrete Devices 30A 600V Fast Recovery Diode -- MUR3060PT   Features * Lower reverse leakage current * Low power consumption, high efficiency * High reliability * RoHS compliant product   Applications * Switch-mode power supplies * Inverters/frequency converters * Automotive electronics * Other Electronic Circuits   Package and outline   TO-247 Maximum Ratings（Tc=25℃）   Parameter Symbol Value Unit Peak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking Voltage VRRMVRWMVR 600 V Average Rectified Forward Current(Rated VR, TC = 125°C) Per Diode                                        Per Device IF(AV) 15      30     A Surge non repetitive forward current   (tp = 8.3 ms sinusoidal) IFSM 150 A Storage Temperature Range Tstg -55~+150 ℃ Operating Junction Temperature TJ 150 ℃   Electrical Characteristics Parameter Symbol Value(max) Unit  Instantaneous Forward Voltage (Note 1)@ IF = 15A, TC = 25°C@ IF = 15A, TC = 125…

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