BLC9H10XS-606AZ RF MOSFET LDMOS 48V

Part No.: BLC9H10XS-606A   Manufacturer: Ampleon   Device Type: 9th-generation 48V LDMOS RF power transistor, asymmetric Doherty design with integrated input matching, optimized for sub-1GHz 4G/5G base station final power amplifier.   Key Specifications   Frequency Range：616 MHz ~ 960 MHz Typical Supply Voltage：48 V, Max VDS：105 V Output Power：600 W Power Gain：18 dB (Typ.) Drain Efficiency：53.8% (Doherty mode) Package：SOT1250-4, 4-pin earless flange package Thermal Resistance (Junction to Case)：0.4 K/W Ruggedness：10:1 full VSWR load mismatch tolerance Features：Low memory effect, DPD compatible, built-in ESD protection, 50 Ω internal matching   Key Features   Adopts asymmetric Doherty architecture to balance high efficiency and superior linearity. Wideband coverage covers mainstream sub-1GHz cellular bands, suitable for high-PAR multi-carrier and wideband 5G NR / LTE signals.   Flange package provides excellent heat dissipation and high operational reliability. Integrated m…

Single Layer Capacitor HF / VHF Power LDMOS Wideband RF Capacitor Ultra Low ESR RF Capacitor 2-Stage Doherty MMIC